BCW61AE6327HTSA1
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- Mfr.Part #
- BCW61AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 34,974
- In Stock ：
- 34,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Halogen Free :
- Not Halogen Free
- Mount :
- Surface Mount
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -32V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 550mV
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Current Rating :
- -100mA
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 330mW
- Base Part Number :
- BCW61
- Power - Max :
- 330mW
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 26 Weeks
- hFE Min :
- 120
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Collector Current :
- 100mA
- Frequency - Transition :
- 250MHz
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 32V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Form :
- Gull wing
- Datasheets
- BCW61AE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61AE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BCW61AE6327HTSA1 Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BCW61AE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW61AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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