BCW60C235
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- Mfr.Part #
- BCW60C235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA SMALL SIGNAL BIPOLA
- Stock
- 4,076
- In Stock ：
- 4,076
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Max Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Frequency :
- 250MHz
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 250MHz
- Base Part Number :
- BCW60
- Collector Base Voltage (VCBO) :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 32V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Published :
- 2001
- Turn Off Time-Max (toff) :
- 800ns
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Datasheets
- BCW60C235
Specialized ICs NXP Semiconductors BCW60C235 Overview
The Specialized ICs NXP Semiconductors BCW60C235 is a highly efficient, low-power silicon NPN transistor optimized for high performance in compact electronic designs. It offers an impressive DC current gain of 250 at 2mA and 5V, showcasing a robust performance profile suitable for demanding applications. The Vce saturation maximum of 550mV at currents ranging from 1.25mA to 50mA indicates its effectiveness in low-voltage operations. It is also characterized by a transition frequency of 250MHz, which allows for rapid switching capabilities, essential in high-frequency applications. This transistor operates at a collector current up to 100mA, ensuring adaptability in various circuit configurations, making it ideal for specialized industrial applications.
Key Features
DC current gain of 250 at 2mA and 5V enhances component efficiency.
Vce saturation (Max) of 550mV at 1.25mA to 50mA allows for effective performance in varied electrical environments.
Maintains a consistent emitter base voltage at 5V for stable operation.
High transition frequency of 250MHz supports quick switching needs.
Applications
The Specialized ICs NXP Semiconductors BCW60C235 transistor is versatile for various high-demand applications, including:
- Inverter circuits where efficient power conversion is required.
- Interface modules that benefit from its fast switching capabilities.
- Driver components in both digital and analog domains.
- Muting circuits where rapid on-off control is necessary.
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