BCV49,135
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- Mfr.Part #
- BCV49,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT89
- Stock
- 132,550
- In Stock ：
- 132,550
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Max Collector Current :
- 500mA
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Case Connection :
- COLLECTOR
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 1.3W
- Pin Count :
- 3
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSSO-F3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Base Part Number :
- BCV49
- Frequency - Transition :
- 220MHz
- Transition Frequency :
- 220MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 1V
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Form :
- Flat
- Polarity :
- NPN
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.3W
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 4
- VCEsat-Max :
- 1 V
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Datasheets
- BCV49,135
SOT89.jpg)
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BCV49,135 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV49,135 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz
BCV49,135 Applications
There are a lot of Nexperia USA Inc.
BCV49,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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