BCP69
- Mfr.Part #
- BCP69
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 1.5A SOT223-4
- Stock
- 296,986
- In Stock :
- 296,986
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Base Part Number :
- BCP69
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Terminal Form :
- Gull wing
- Current Rating :
- 1A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Contact Plating :
- Tin
- hFE Min :
- 85
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 1.6mm
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Width :
- 3.5mm
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Weight :
- 188mg
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Saturation Voltage :
- -500mV
- Max Breakdown Voltage :
- 20V
- Voltage - Rated DC :
- -20V
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Terminal Position :
- Dual
- Length :
- 6.5mm
- Datasheets
- BCP69

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP69 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
BCP69 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is 1A
BCP69 Applications
There are a lot of ON Semiconductor
BCP69 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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