BCP56-16
- Mfr.Part #
- BCP56-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 82,250
- In Stock :
- 82,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Length :
- 6.7mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 100
- Max Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 1.82mm
- Transition Frequency :
- 120MHz
- Max Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.6W
- Width :
- 3.7mm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 80V
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PDSO-G4
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Base Part Number :
- BCP56
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Manufacturer Package Identifier :
- SOT-223-P008
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Terminal Form :
- Gull wing
- Datasheets
- BCP56-16

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-16 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP56-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
BCP56-16 Applications
There are a lot of STMicroelectronics
BCP56-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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