BCP56-16
- Mfr.Part #
- BCP56-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 82,250
- In Stock :
- 82,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.6W
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Manufacturer Package Identifier :
- SOT-223-P008
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PDSO-G4
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- Length :
- 6.7mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 4
- Base Part Number :
- BCP56
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Transition Frequency :
- 120MHz
- Power Dissipation :
- 1.6W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Height :
- 1.82mm
- Max Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCP56-16

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-16 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP56-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
BCP56-16 Applications
There are a lot of STMicroelectronics
BCP56-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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