BCP55E6327HTSA1

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Mfr.Part #
BCP55E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 60V 1A SOT223-4
Stock
2,928
In Stock :
2,928

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
60V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Transistor Type :
NPN
Base Part Number :
BCP55
Surface Mount :
yes
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Terminal Form :
Gull wing
Power - Max :
2W
JESD-30 Code :
R-PDSO-G4
Operating Temperature :
150°C TJ
Pbfree Code :
No
Configuration :
Single
Number of Terminations :
4
Package / Case :
TO-261-4, TO-261AA
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Terminal Position :
Dual
Published :
2011
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Frequency - Transition :
100MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Reach Compliance Code :
Compliant
Current - Collector (Ic) (Max) :
1A
Datasheets
BCP55E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCP55E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BCP55, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, BCP55E6327HTSA1 pinout, BCP55E6327HTSA1 datasheet PDF, BCP55E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCP55E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCP55E6327HTSA1


NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BCP55E6327HTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).

BCP55E6327HTSA1 Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA


BCP55E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCP55E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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