BCP53-10,115
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- Mfr.Part #
- BCP53-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 760
- In Stock ：
- 760
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Power Dissipation :
- 1.35W
- Max Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 145MHz
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Published :
- 2008
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Height :
- 1.7mm
- Number of Terminations :
- 4
- Frequency :
- 145MHz
- Power - Max :
- 1W
- Pin Count :
- 4
- Base Part Number :
- BCP53
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 145MHz
- Length :
- 6.7mm
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- hFE Min :
- 63
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Weight :
- 4.535924g
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Width :
- 3.7mm
- Operating Temperature :
- 150°C TJ
- Datasheets
- BCP53-10,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP53-10,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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