BCP5210TA
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- Mfr.Part #
- BCP5210TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223-3
- Stock
- 3,304
- In Stock ：
- 3,304
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Frequency :
- 150MHz
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Number of Terminations :
- 4
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transition Frequency :
- 150MHz
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2013
- Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 3.55mm
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 4
- Length :
- 6.55mm
- Max Collector Current :
- 1A
- Additional Feature :
- High Reliability
- Pin Count :
- 4
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- -500mV
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 125MHz
- Height :
- 1.65mm
- Base Part Number :
- BCP52
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Datasheets
- BCP5210TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5210TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5210TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5210TA Applications
There are a lot of Diodes Incorporated
BCP5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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