BCP51TA
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- Mfr.Part #
- BCP51TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT223-3
- Stock
- 148,507
- In Stock ：
- 148,507
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 150MHz
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.7mm
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 125MHz
- Current Rating :
- -1A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 4
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Additional Feature :
- High Reliability
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.65mm
- Published :
- 2011
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 1A
- Width :
- 3.7mm
- Lead Free :
- Contains Lead
- Collector Emitter Saturation Voltage :
- -500mV
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Base Part Number :
- BCP51
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Weight :
- 7.994566mg
- Datasheets
- BCP51TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP51TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP51TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP51TA Applications
There are a lot of Diodes Incorporated
BCP51TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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