BCM857DS115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Min Operating Temperature :

-65°C

Collector Base Voltage (VCBO) :

-50V

Max Operating Temperature :

150°C

hFE Min :

200

Test Current :

5mA

Length :

5mm

Base Part Number :

BCM857

Number of Elements :

2

Operating Temperature :

150°C TJ

Zener Voltage :

3.3V

Resistance :

50Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

175MHz

Frequency - Transition :

175MHz

Supplier Device Package :

6-TSOP

Voltage - Collector Emitter Breakdown (Max) :

45V

Contact Plating :

Tin

Current - Collector (Ic) (Max) :

100mA

Weight :

4.535924g

ESR (Equivalent Series Resistance) :

50Ohm

Factory Lead Time :

4 Weeks

Package / Case :

SC-74, SOT-457

Width :

3.2mm

Transistor Type :

2 PNP (Dual) Matched Pair

Frequency Tolerance :

0.002%

Frequency :

16MHz

Emitter Base Voltage (VEBO) :

-5V

Polarity :

PNP

Collector Emitter Saturation Voltage :

-200mV

Published :

2008

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Current - Collector Cutoff (Max) :

15nA ICBO

Max Collector Current :

-100mA

Max Power Dissipation :

380mW

Tolerance :

0.002%

RoHS Status :

ROHS3 Compliant

Load Capacitance :

18pF

Collector Emitter Voltage (VCEO) :

-45V

Element Configuration :

Dual

Ambient Temperature Range High :

150°C

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

-45V

Power - Max :

380mW

Power Dissipation :

380mW

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Radiation Hardening :

No

Max Breakdown Voltage :

45V