BCM857BS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

PNP

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Transition Frequency :

175MHz

Transistor Type :

2 PNP (Dual) Matched Pair

Collector Emitter Voltage (VCEO) :

-45V

Number of Terminations :

6

Collector Base Voltage (VCBO) :

50V

Max Power Dissipation :

300mW

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2.2mm

Base Part Number :

BCM857

Published :

2009

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Frequency :

175MHz

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

-45V

Test Current :

5mA

Pin Count :

6

Number of Pins :

6

Gain Bandwidth Product :

175MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Tolerance :

5%

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Current :

1A

Zener Voltage :

39V

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

100mA

JESD-609 Code :

e3

Number of Elements :

2

Power Dissipation :

300mW

Max Breakdown Voltage :

45V

Height :

1mm

Width :

1.35mm

Collector Emitter Saturation Voltage :

400mV

Element Configuration :

Dual

Voltage :

45V

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V