BCM856SH6778XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

2 PNP (Dual)

Voltage - Collector Emitter Breakdown (Max) :

65V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

65V

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

Supplier Device Package :

PG-SOT363-6

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

100mA

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

650mV

Base Part Number :

BCM856S

Frequency - Transition :

250MHz

Power - Max :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA ICBO

Published :

2011

Max Operating Temperature :

150°C

Collector Base Voltage (VCBO) :

80V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Pins :

6

Package / Case :

6-VSSOP, SC-88, SOT-363