BCM847BV,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

300mW

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Power - Max :

300mW

Max Power Dissipation :

300mW

Current - Collector (Ic) (Max) :

100mA

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Polarity :

NPN

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

45V

Height :

600μm

Length :

1.7mm

Voltage - Collector Emitter Breakdown (Max) :

45V

Collector Emitter Voltage (VCEO) :

45V

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

400mV

Width :

1.3mm

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Max Collector Current :

100mA

Base Part Number :

BCM847

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

Max Breakdown Voltage :

45V

Max Frequency :

250MHz

Contact Plating :

Tin

Min Operating Temperature :

-65°C

Frequency :

250MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Type :

2 NPN (Dual) Matched Pair

RoHS Status :

ROHS3 Compliant

hFE Min :

200

Supplier Device Package :

SOT-666

Number of Elements :

2

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

Gain Bandwidth Product :

250MHz