BCM846BS

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

65V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

2

Current - Collector Cutoff (Max) :

15nA ICBO

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Number of Terminations :

6

Published :

2015

Contact Plating :

Tin

Max Power Dissipation :

200mW

Configuration :

SEPARATE, 2 ELEMENTS

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

200mV

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

NPN

Pin Count :

6

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Frequency - Transition :

250MHz

Reference Standard :

AEC-Q101; IEC-60134

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

100mA

Terminal Form :

Gull wing

Power - Max :

200mW

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Transition Frequency :

250MHz

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

200mV @ 500μA, 10mA

Mount :

Surface Mount