BC817W,135
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- Mfr.Part #
- BC817W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC817W - SMALL SIGN
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- BC817
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 45V
- Published :
- 2009
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Datasheets
- BC817W,135
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC817W,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC817W,135 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817W,135 Applications
There are a lot of Nexperia USA Inc.
BC817W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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