BC817DSF

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

370mW

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

700mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Max Collector Current :

500mA

Base Part Number :

BC817DS

Number of Terminations :

6

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Power - Max :

370mW

Transistor Application :

SWITCHING

Frequency - Transition :

100MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G6

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2004

Collector Emitter Breakdown Voltage :

45V

Configuration :

SEPARATE, 2 ELEMENTS

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Series :

Automotive, AEC-Q101

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Operating Temperature :

150°C TJ

Package / Case :

SC-74, SOT-457

RoHS Status :

ROHS3 Compliant