BC807DS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Forward Voltage :

380mV

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Max Repetitive Reverse Voltage (Vrrm) :

40V

Transition Frequency :

80MHz

Weight :

4.535924g

Element Configuration :

Dual

Pin Count :

6

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.35mm

Max Power Dissipation :

600mW

Collector Emitter Breakdown Voltage :

45V

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

2

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

45V

Max Forward Surge Current (Ifsm) :

200mA

Frequency :

80MHz

Published :

2009

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Pins :

6

Base Part Number :

BC807DS

hFE Min :

40

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

Series :

Automotive, AEC-Q101

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

45V

Gain Bandwidth Product :

80MHz

Power Dissipation :

600mW

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Forward Current :

120mA

Collector Base Voltage (VCBO) :

50V

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Contact Plating :

Tin

Length :

6.35mm

Max Collector Current :

500mA

REACH SVHC :

No SVHC

Height :

6.35mm