BC80725E6327
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- Mfr.Part #
- BC80725E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 10,429
- In Stock ：
- 10,429
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Base Part Number :
- BC807
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation-Max (Abs) :
- 0.33W
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency - Transition :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 500mA
- Transition Frequency :
- 200MHz
- Published :
- 2007
- Configuration :
- Single
- Power - Max :
- 330mW
- Datasheets
- BC80725E6327
BC80725E6327 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC 807-25 E6327 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC 807-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 807-25 E6327 Applications
There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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