BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Width :
- 1.3mm
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Power Dissipation :
- 310mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Weight :
- 30mg
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- -700mV
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- -50V
- Transistor Type :
- PNP
- Base Part Number :
- BC807
- Published :
- 2002
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 310mW
- Height :
- 970μm
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Datasheets
- BC80716MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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