BC557A
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- Mfr.Part #
- BC557A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -50V
- Base Part Number :
- BC557
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2007
- Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- -5V
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Height :
- 5.33mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Length :
- 5.2mm
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -250mV
- hFE Min :
- 110
- Contact Plating :
- Tin
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Weight :
- 240mg
- Voltage - Rated DC :
- -45V
- Datasheets
- BC557A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC557ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557ATA Applications
There are a lot of ON Semiconductor
BC557ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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