BC547BBU
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- Mfr.Part #
- BC547BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 5,546
- In Stock ：
- 5,546
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2002
- Height :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Weight :
- 179mg
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 7 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Length :
- 4.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- BC547
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Frequency :
- 300MHz
- Power Dissipation :
- 500mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 110
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Width :
- 3.86mm
- Datasheets
- BC547BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC547BBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC547BBU Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC547BBU Applications
There are a lot of ON Semiconductor
BC547BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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