BC237BRL1G
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- Mfr.Part #
- BC237BRL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 33,287
- In Stock ：
- 33,287
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC237
- Contact Plating :
- Copper, Silver, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- hFE Min :
- 200
- Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Current Rating :
- 100mA
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 45V
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 15nA
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Datasheets
- BC237BRL1G
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC237BRL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC237BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BRL1G Applications
There are a lot of ON Semiconductor
BC237BRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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