BC182G
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- Mfr.Part #
- BC182G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 46,930
- In Stock ：
- 46,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Collector Emitter Saturation Voltage :
- 200mV
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 200MHz
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Published :
- 2007
- Max Power Dissipation :
- 350mW
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Packaging :
- Bulk
- Max Collector Current :
- 100mA
- Power Dissipation :
- 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Base Part Number :
- BC182
- Datasheets
- BC182G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 200MHz.A maximum collector current of 100mA volts can be achieved.
BC182G Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182G Applications
There are a lot of ON Semiconductor
BC182G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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