BC182G
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- Mfr.Part #
- BC182G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 46,930
- In Stock ：
- 46,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Max Power Dissipation :
- 350mW
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2007
- Power Dissipation :
- 350mW
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- BC182
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 200MHz
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 100mA
- Number of Terminations :
- 3
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 50V
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Pbfree Code :
- yes
- hFE Min :
- 120
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Max Collector Current :
- 100mA
- Datasheets
- BC182G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 200MHz.A maximum collector current of 100mA volts can be achieved.
BC182G Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182G Applications
There are a lot of ON Semiconductor
BC182G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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