AUIRGP4062D-E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Max Collector Current :

48A

Turn-Off Delay Time :

104 ns

Published :

2011

Turn On Time :

64 ns

Number of Pins :

3

Collector Emitter Saturation Voltage :

1.95V

Turn Off Time-Nom (toff) :

164 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Number of Terminations :

3

Mounting Type :

Through Hole

Gate-Emitter Thr Voltage-Max :

6.5V

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

Td (on/off) @ 25°C :

41ns/104ns

Width :

5.31mm

Current - Collector Pulsed (Icm) :

72A

Length :

15.87mm

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Reverse Recovery Time :

89ns

Turn On Delay Time :

40 ns

Test Condition :

400V, 24A, 10 Ω, 15V

Transistor Element Material :

SILICON

Element Configuration :

Single

Input Type :

Standard

Fall Time-Max (tf) :

41ns

Factory Lead Time :

16 Weeks

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Max Power Dissipation :

250W

Package / Case :

TO-247-3

Gate Charge :

50nC

Operating Temperature :

-55°C~175°C TJ

Height :

20.7mm

JEDEC-95 Code :

TO-247AD

Switching Energy :

115μJ (on), 600μJ (off)

Collector Emitter Voltage (VCEO) :

600V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Power Dissipation :

250W