AUIRF9952Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Published :

2011

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

16A

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tube

Drain-source On Resistance-Max :

0.1Ohm

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

2.8A

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

44 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

2W