APT6M100K
- Mfr.Part #
- APT6M100K
- Manufacturer
- Microsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6A TO220
- Stock
- 46,895
- In Stock :
- 46,895
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 1000V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1410pF @ 25V
- Packaging :
- Tube
- Mount :
- Through Hole
- Voltage - Rated DC :
- 1kV
- Weight :
- 6.000006g
- Radiation Hardening :
- No
- Current Rating :
- 5.8A
- Turn On Delay Time :
- 6.4 ns
- Continuous Drain Current (ID) :
- 6A
- Drain Current-Max (Abs) (ID) :
- 6A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 5.4 ns
- Power Dissipation :
- 225W
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Width :
- 4.72mm
- Pulsed Drain Current-Max (IDM) :
- 20A
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 5.8ns
- Power Dissipation-Max :
- 225W Tc
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 3A, 10V
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 22 ns
- Published :
- 2006
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Length :
- 10.26mm
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Height :
- 9.19mm
- Datasheets
- APT6M100K

N-Channel Tube 2.5 Ω @ 3A, 10V ±30V 1410pF @ 25V 43nC @ 10V 1000V TO-220-3
APT6M100K Overview
A device's maximal input capacitance is 1410pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 6A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 22 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
APT6M100K Features
a continuous drain current (ID) of 6A
the turn-off delay time is 22 ns
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
APT6M100K Applications
There are a lot of Microsemi Corporation
APT6M100K applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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