APT60N60BCSG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Continuous Drain Current (ID) :

60A

Mount :

Through Hole

Weight :

38.000013g

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

16.26mm

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Voltage - Rated DC :

600V

Package / Case :

TO-247-3

ECCN Code :

EAR99

Additional Feature :

AVALANCHE ENERGY RATED

Pbfree Code :

yes

Turn-Off Delay Time :

100 ns

Height :

5.31mm

Current Rating :

60A

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Case Connection :

DRAIN

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Power Dissipation :

431W

Operating Temperature :

-55°C~150°C TJ

Length :

21.46mm

Radiation Hardening :

No

Published :

1997

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

230A

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

45m Ω @ 44A, 10V

JEDEC-95 Code :

TO-247AD

Vgs(th) (Max) @ Id :

3.9V @ 3mA

Drain-source On Resistance-Max :

0.045Ohm

Pin Count :

3

Turn On Delay Time :

30 ns

Factory Lead Time :

24 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

431W Tc

Mounting Type :

Through Hole

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Lead Free :

Lead Free