APT60M80L2VRG
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- Mfr.Part #
- APT60M80L2VRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 65A 264 MAX
- Stock
- 42,116
- In Stock ：
- 42,116
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Power Dissipation :
- 833W
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.08Ohm
- Fall Time (Typ) :
- 31 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13300pF @ 25V
- Terminal Finish :
- TIN SILVER COPPER
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 32.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 14 ns
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 70 ns
- Pin Count :
- 3
- Power Dissipation-Max :
- 833W Tc
- FET Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Published :
- 1997
- Series :
- POWER MOS V®
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Voltage - Rated DC :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Rise Time :
- 24ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 65A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Current Rating :
- 65A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pulsed Drain Current-Max (IDM) :
- 260A
- Datasheets
- APT60M80L2VRG
N-Channel Tube 80m Ω @ 32.5A, 10V ±30V 13300pF @ 25V 590nC @ 10V TO-264-3, TO-264AA
APT60M80L2VRG Overview
A device's maximum input capacitance is 13300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 65A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M80L2VRG Features
a continuous drain current (ID) of 65A
the turn-off delay time is 70 ns
based on its rated peak drain current 260A.
APT60M80L2VRG Applications
There are a lot of Microsemi Corporation
APT60M80L2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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