APT60M80JVR

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Case Connection :

Isolated

Series :

POWER MOS V®

Radiation Hardening :

No

Power Dissipation :

568W

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 5mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

568W Tc

Pulsed Drain Current-Max (IDM) :

220A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Rds On (Max) @ Id, Vgs :

80m Ω @ 500mA, 10V

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

3200 mJ

Package / Case :

SOT-227-4, miniBLOC

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

55A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Fall Time (Typ) :

31 ns

Number of Terminations :

4

Packaging :

Tube

Rise Time :

25ns

Mount :

Chassis Mount, Screw

Current Rating :

55A

Terminal Position :

UPPER

Turn On Delay Time :

15 ns

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

870nC @ 10V

Transistor Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

73 ns

Input Capacitance (Ciss) (Max) @ Vds :

14500pF @ 25V

FET Type :

N-Channel

Voltage - Rated DC :

600V

Drain-source On Resistance-Max :

0.08Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1