APT60M75JVR
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- Mfr.Part #
- APT60M75JVR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 62A ISOTOP
- Stock
- 48,915
- In Stock ：
- 48,915
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Rise Time :
- 20ns
- Number of Pins :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 600V
- Case Connection :
- Isolated
- Current Rating :
- 62A
- Mount :
- Chassis Mount, Screw
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 500mA, 10V
- Published :
- 1997
- Turn-Off Delay Time :
- 80 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- UPPER
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 62A
- Gate Charge (Qg) (Max) @ Vgs :
- 1050nC @ 10V
- Power Dissipation :
- 700W
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Drain-source On Resistance-Max :
- 0.075Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- UNSPECIFIED
- Power Dissipation-Max :
- 700W Tc
- Number of Terminations :
- 4
- Series :
- POWER MOS V®
- Turn On Delay Time :
- 20 ns
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 19800pF @ 25V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 12 ns
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- High Voltage
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Factory Lead Time :
- 31 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT60M75JVR
N-Channel Tube 75m Ω @ 500mA, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC
APT60M75JVR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.A device's maximum input capacitance is 19800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M75JVR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 62A
the turn-off delay time is 80 ns
APT60M75JVR Applications
There are a lot of Microsemi Corporation
APT60M75JVR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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