APT60M75JVFR
- Mfr.Part #
- APT60M75JVFR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 62A ISOTOP
- Stock
- 38,487
- In Stock :
- 38,487
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 31A, 10V
- Pin Count :
- 4
- Published :
- 1997
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Continuous Drain Current (ID) :
- 62A
- Power Dissipation :
- 700W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Terminal Form :
- UNSPECIFIED
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Series :
- POWER MOS V®
- Number of Elements :
- 1
- Current Rating :
- 62A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Vgs (Max) :
- ±30V
- Terminal Position :
- UPPER
- Drain-source On Resistance-Max :
- 0.075Ohm
- Power Dissipation-Max :
- 700W Tc
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE ENERGY RATED
- Transistor Element Material :
- SILICON
- Mount :
- Chassis Mount, Screw
- Gate Charge (Qg) (Max) @ Vgs :
- 1050nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 19800pF @ 25V
- Mounting Type :
- Chassis Mount
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- SOT-227-4, miniBLOC
- Voltage - Rated DC :
- 600V
- RoHS Status :
- RoHS Compliant
- Datasheets
- APT60M75JVFR

N-Channel Tube 75m Ω @ 31A, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC
APT60M75JVFR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3600 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 19800pF @ 25V.This device conducts a continuous drain current (ID) of 62A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT60M75JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 62A
APT60M75JVFR Applications
There are a lot of Microsemi Corporation
APT60M75JVFR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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