APT60M75JLL
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- Mfr.Part #
- APT60M75JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 58A ISOTOP
- Stock
- 14,822
- In Stock ：
- 14,822
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8930pF @ 25V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 600V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- Power Dissipation-Max :
- 595W Tc
- Series :
- POWER MOS 7®
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 4
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- Number of Terminations :
- 4
- JESD-609 Code :
- e1
- Additional Feature :
- UL RECOGNIZED
- Mount :
- Chassis Mount, Screw
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.075Ohm
- Current Rating :
- 58A
- Terminal Position :
- UPPER
- Pbfree Code :
- yes
- Factory Lead Time :
- 31 Weeks
- Rise Time :
- 15ns
- Pin Count :
- 4
- Turn-Off Delay Time :
- 55 ns
- Published :
- 1997
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 29A, 10V
- Fall Time (Typ) :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Terminal Form :
- UNSPECIFIED
- Continuous Drain Current (ID) :
- 58A
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 23 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 232A
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- APT60M75JLL
N-Channel Tube 75m Ω @ 29A, 10V ±30V 8930pF @ 25V 195nC @ 10V SOT-227-4, miniBLOC
APT60M75JLL Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8930pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 58A amps.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 232A.A turn-on delay time of 23 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT60M75JLL Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 58A
the turn-off delay time is 55 ns
based on its rated peak drain current 232A.
APT60M75JLL Applications
There are a lot of Microsemi Corporation
APT60M75JLL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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