APT56M50L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

780W

Length :

26.49mm

Mount :

Through Hole

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

33 ns

Package / Case :

TO-264-3, TO-264AA

Weight :

10.6g

Mounting Type :

Through Hole

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

100m Ω @ 28A, 10V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Power Dissipation-Max :

780W Tc

Case Connection :

DRAIN

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8800pF @ 25V

Resistance :

100MOhm

Turn On Delay Time :

38 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Packaging :

Tube

Number of Elements :

1

Current Rating :

56A

Lead Free :

Lead Free

Number of Terminations :

3

Height :

5.21mm

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Turn-Off Delay Time :

100 ns

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

56A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC :

500V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Rise Time :

45ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Pin Count :

3

Width :

20.5mm