APT56F50B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

100m Ω @ 28A, 10V

Package / Case :

TO-247-3 Variant

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Rise Time :

45ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Continuous Drain Current (ID) :

56A

Turn-Off Delay Time :

100 ns

Factory Lead Time :

22 Weeks

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING

Series :

POWER MOS 8™

Mounting Type :

Through Hole

Power Dissipation-Max :

780W Tc

Packaging :

Tube

Pin Count :

3

Published :

1997

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8800pF @ 25V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Fall Time (Typ) :

33 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Vgs (Max) :

±30V

Mount :

Through Hole

JEDEC-95 Code :

TO-247AB

Power Dissipation :

780W

Turn On Delay Time :

38 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)