APT53F80J

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

960W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

145ns

Vgs(th) (Max) @ Id :

5V @ 5mA

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Element Configuration :

Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

53A

Input Capacitance (Ciss) (Max) @ Vds :

17550pF @ 25V

Power Dissipation :

960W

Length :

38.2mm

Pbfree Code :

yes

Radiation Hardening :

No

Voltage - Rated DC :

800V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

110m Ω @ 43A, 10V

Turn-Off Delay Time :

435 ns

Mounting Type :

Chassis Mount

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Elements :

1

Mount :

Chassis Mount, Screw

Transistor Application :

SWITCHING

Packaging :

Tube

Number of Pins :

4

Height :

9.6mm

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Factory Lead Time :

33 Weeks

Continuous Drain Current (ID) :

57A

FET Type :

N-Channel

Package / Case :

SOT-227-4, miniBLOC

Number of Channels :

1

Additional Feature :

AVALANCHE RATED

Number of Terminations :

4

Width :

25.4mm

Gate to Source Voltage (Vgs) :

30V

Series :

POWER MOS 8™

Weight :

30.000004g

Pin Count :

4

Terminal Position :

UPPER

Published :

1997

Turn On Delay Time :

100 ns

Avalanche Energy Rating (Eas) :

3725 mJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

125 ns

Pulsed Drain Current-Max (IDM) :

325A

Case Connection :

Isolated