APT51M50J
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- Mfr.Part #
- APT51M50J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 51A ISOTOP
- Stock
- 35,745
- In Stock ：
- 35,745
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 19 Weeks
- Current Rating :
- 51A
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 39 ns
- Rise Time :
- 55ns
- Power Dissipation-Max :
- 480W Tc
- Drain-source On Resistance-Max :
- 0.075Ohm
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 51A
- Terminal Position :
- UPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 25V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pulsed Drain Current-Max (IDM) :
- 230A
- Voltage - Rated DC :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 290nC @ 10V
- Mount :
- Chassis Mount, Screw
- Number of Terminations :
- 4
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30.000004g
- Power Dissipation :
- 480W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Terminal Form :
- UNSPECIFIED
- Package / Case :
- SOT-227-4, miniBLOC
- Case Connection :
- Isolated
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 120 ns
- Published :
- 1997
- Drain to Source Breakdown Voltage :
- 500V
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Height :
- 9.6mm
- Vgs (Max) :
- ±30V
- Length :
- 38.2mm
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 37A, 10V
- Width :
- 25.4mm
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Turn On Delay Time :
- 45 ns
- Datasheets
- APT51M50J
N-Channel Tube 75m Ω @ 37A, 10V ±30V 11600pF @ 25V 290nC @ 10V SOT-227-4, miniBLOC
APT51M50J Overview
A device's maximal input capacitance is 11600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 51A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 120 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 230A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
APT51M50J Features
a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 230A.
APT51M50J Applications
There are a lot of Microsemi Corporation
APT51M50J applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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