APT50M80B2VRG
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- Mfr.Part #
- APT50M80B2VRG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A T-MAX
- Stock
- 23,731
- In Stock ：
- 23,731
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 423nC @ 10V
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3 Variant
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 625W
- Continuous Drain Current (ID) :
- 58A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Rise Time :
- 25ns
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Voltage - Rated DC :
- 500V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 29A, 10V
- Current Rating :
- 58A
- Input Capacitance (Ciss) (Max) @ Vds :
- 8797pF @ 25V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.08Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Fall Time (Typ) :
- 23 ns
- Published :
- 2012
- Turn On Delay Time :
- 14 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- TIN SILVER COPPER
- Number of Elements :
- 1
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Mount :
- Through Hole
- Series :
- POWER MOS V®
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 64 ns
- Datasheets
- APT50M80B2VRG
N-Channel Tube 80m Ω @ 29A, 10V 8797pF @ 25V 423nC @ 10V TO-247-3 Variant
APT50M80B2VRG Overview
A device's maximum input capacitance is 8797pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT50M80B2VRG Features
a continuous drain current (ID) of 58A
the turn-off delay time is 64 ns
APT50M80B2VRG Applications
There are a lot of Microsemi Corporation
APT50M80B2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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