APT50M75JLLU2
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- Mfr.Part #
- APT50M75JLLU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 51A SOT227
- Stock
- 47,828
- In Stock ：
- 47,828
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Power Dissipation :
- 290W
- Factory Lead Time :
- 36 Weeks
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 25.5A, 10V
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 290W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Fall Time (Typ) :
- 5 ns
- Continuous Drain Current (ID) :
- 51A
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Width :
- 25.4mm
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Turn On Delay Time :
- 10 ns
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 20ns
- Length :
- 38.2mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5590pF @ 25V
- Series :
- POWER MOS 7®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Mounting Type :
- Chassis Mount
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Height :
- 9.6mm
- Published :
- 2006
- DS Breakdown Voltage-Min :
- 500V
- Packaging :
- Bulk
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 21 ns
- Terminal Position :
- UPPER
- Weight :
- 30.000004g
- Transistor Application :
- SWITCHING
- Mount :
- Chassis Mount, Screw
- Radiation Hardening :
- No
- Resistance :
- 75mOhm
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Datasheets
- APT50M75JLLU2
N-Channel Bulk 75m Ω @ 25.5A, 10V ±30V 5590pF @ 25V 123nC @ 10V 500V SOT-227-4, miniBLOC
APT50M75JLLU2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5590pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 51A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APT50M75JLLU2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 51A
the turn-off delay time is 21 ns
a 500V drain to source voltage (Vdss)
APT50M75JLLU2 Applications
There are a lot of Microsemi Corporation
APT50M75JLLU2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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