APT50M65LLLG
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- Mfr.Part #
- APT50M65LLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 67A TO264
- Stock
- 25,476
- In Stock ：
- 25,476
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package / Case :
- TO-264-3, TO-264AA
- Turn On Delay Time :
- 12 ns
- Published :
- 1997
- Drain-source On Resistance-Max :
- 0.065Ohm
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 268A
- Current Rating :
- 67A
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 7010pF @ 25V
- Rise Time :
- 28ns
- Gate Charge (Qg) (Max) @ Vgs :
- 141nC @ 10V
- Continuous Drain Current (ID) :
- 67A
- Pin Count :
- 3
- Power Dissipation :
- 694W
- Power Dissipation-Max :
- 694W Tc
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Series :
- POWER MOS 7®
- Fall Time (Typ) :
- 30 ns
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 29 ns
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 500V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 33.5A, 10V
- Datasheets
- APT50M65LLLG
N-Channel Tube 65m Ω @ 33.5A, 10V ±30V 7010pF @ 25V 141nC @ 10V TO-264-3, TO-264AA
APT50M65LLLG Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7010pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 67A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 29 ns.Peak drain current for this device is 268A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
APT50M65LLLG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 67A
the turn-off delay time is 29 ns
based on its rated peak drain current 268A.
APT50M65LLLG Applications
There are a lot of Microsemi Corporation
APT50M65LLLG applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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