APT50M65JFLL
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- Mfr.Part #
- APT50M65JFLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A ISOTOP
- Stock
- 26,313
- In Stock ：
- 26,313
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 58A
- Turn On Delay Time :
- 12 ns
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 29 ns
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 7010pF @ 25V
- Terminal Position :
- UPPER
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Additional Feature :
- UL RECOGNIZED
- FET Type :
- N-Channel
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Fall Time (Typ) :
- 30 ns
- Mount :
- Chassis Mount, Screw
- Power Dissipation :
- 520W
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Tube
- Terminal Form :
- UNSPECIFIED
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 500V
- Rise Time :
- 28ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 141nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 520W Tc
- Pulsed Drain Current-Max (IDM) :
- 232A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Pins :
- 4
- Series :
- POWER MOS 7®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 1997
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 58A
- Factory Lead Time :
- 26 Weeks
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.065Ohm
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 29A, 10V
- Datasheets
- APT50M65JFLL
N-Channel Tube 65m Ω @ 29A, 10V ±30V 7010pF @ 25V 141nC @ 10V SOT-227-4, miniBLOC
APT50M65JFLL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 7010pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 58A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 29 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 232A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT50M65JFLL Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 58A
the turn-off delay time is 29 ns
based on its rated peak drain current 232A.
APT50M65JFLL Applications
There are a lot of Microsemi Corporation
APT50M65JFLL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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