APT5022BNG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Pin Count :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Max (toff) :

237ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

220m Ω @ 13.5A, 10V

Power Dissipation-Max :

360W Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS IV®

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Feedback Cap-Max (Crss) :

350 pF

Current - Continuous Drain (Id) @ 25°C :

27A Tc

JESD-30 Code :

R-PSFM-G3

Drain Current-Max (Abs) (ID) :

27A

Vgs (Max) :

±30V

Turn On Time-Max (ton) :

124ns

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.22Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

21 Weeks

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

108A

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Package / Case :

TO-247-3

Reach Compliance Code :

Unknown

Terminal Position :

Single

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V