APT36N90BC3G
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- Mfr.Part #
- APT36N90BC3G
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 36A TO247
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 18A, 10V
- Power Dissipation :
- 390W
- FET Feature :
- Super Junction
- Turn-Off Delay Time :
- 400 ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 900V
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 96A
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 7463pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 70 ns
- Number of Terminations :
- 3
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 21.46mm
- Width :
- 16.26mm
- Continuous Drain Current (ID) :
- 36mA
- Mount :
- Through Hole
- Height :
- 5.31mm
- Gate Charge (Qg) (Max) @ Vgs :
- 252nC @ 10V
- Rise Time :
- 20ns
- ECCN Code :
- EAR99
- Nominal Vgs :
- 3 V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 390W Tc
- Published :
- 1997
- Lifecycle Status :
- Obsolete (Last Updated: 1 month ago)
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-247-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- CoolMOS™
- Fall Time (Typ) :
- 25 ns
- Weight :
- 38.000013g
- Vgs(th) (Max) @ Id :
- 3.5V @ 2.9mA
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Packaging :
- Tube
- Datasheets
- APT36N90BC3G
N-Channel Tube 120m Ω @ 18A, 10V ±20V 7463pF @ 25V 252nC @ 10V TO-247-3
APT36N90BC3G Overview
A device's maximum input capacitance is 7463pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 400 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 70 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT36N90BC3G Features
a continuous drain current (ID) of 36mA
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 96A.
APT36N90BC3G Applications
There are a lot of Microsemi Corporation
APT36N90BC3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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