APT34M60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

43ns

Vgs(th) (Max) @ Id :

5V @ 1mA

Avalanche Energy Rating (Eas) :

930 mJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Published :

1997

Number of Terminations :

3

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-247AB

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

190m Ω @ 17A, 10V

Power Dissipation-Max :

624W Tc

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

Mounting Type :

Through Hole

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Configuration :

Single

Continuous Drain Current (ID) :

36A

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Vgs (Max) :

±30V

Mount :

Through Hole

Turn-Off Delay Time :

115 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Fall Time (Typ) :

34 ns

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

Transistor Application :

SWITCHING

Pbfree Code :

yes

FET Type :

N-Channel

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Pin Count :

3

Voltage - Rated DC :

600V

Terminal Position :

Single

Package / Case :

TO-247-3

Current Rating :

34A

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Drain Current-Max (Abs) (ID) :

58A

Terminal Finish :

TIN SILVER COPPER

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Series :

POWER MOS 8™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

37 ns

Radiation Hardening :

No