APT34M120J
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- Mfr.Part #
- APT34M120J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 35A SOT227
- Stock
- 20,534
- In Stock ：
- 20,534
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Chassis Mount, Screw
- Input Capacitance (Ciss) (Max) @ Vds :
- 18200pF @ 25V
- Number of Pins :
- 4
- Drain to Source Voltage (Vdss) :
- 1200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 960W Tc
- Published :
- 1997
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Chassis Mount
- Transistor Element Material :
- SILICON
- Current Rating :
- 34A
- Package / Case :
- SOT-227-4, miniBLOC
- Continuous Drain Current (ID) :
- 35A
- Length :
- 38.2mm
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 25A, 10V
- Packaging :
- Tube
- Fall Time (Typ) :
- 90 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 560nC @ 10V
- Pbfree Code :
- yes
- Weight :
- 30.000004g
- Voltage - Rated DC :
- 1.2kV
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Lead Free :
- Lead Free
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- UPPER
- Number of Terminations :
- 4
- Avalanche Energy Rating (Eas) :
- 2700 mJ
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- ECCN Code :
- EAR99
- Terminal Form :
- UNSPECIFIED
- Case Connection :
- Isolated
- Pin Count :
- 4
- Turn On Delay Time :
- 100 ns
- Power Dissipation :
- 960W
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Rise Time :
- 60ns
- Drain-source On Resistance-Max :
- 0.29Ohm
- Number of Elements :
- 1
- Height :
- 9.6mm
- Number of Channels :
- 1
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 315 ns
- Radiation Hardening :
- No
- Width :
- 25.4mm
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Datasheets
- APT34M120J
N-Channel Tube 300m Ω @ 25A, 10V ±30V 18200pF @ 25V 560nC @ 10V 1200V SOT-227-4, miniBLOC
APT34M120J Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2700 mJ.A device's maximum input capacitance is 18200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 315 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 100 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT34M120J Features
the avalanche energy rating (Eas) is 2700 mJ
a continuous drain current (ID) of 35A
the turn-off delay time is 315 ns
a 1200V drain to source voltage (Vdss)
APT34M120J Applications
There are a lot of Microsemi Corporation
APT34M120J applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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