APT34F60B
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- Mfr.Part #
- APT34F60B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO247
- Stock
- 8,272
- In Stock ：
- 8,272
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 115 ns
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Tube
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN SILVER COPPER
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Number of Terminations :
- 3
- Rise Time :
- 43ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6640pF @ 25V
- Turn On Delay Time :
- 37 ns
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 624W Tc
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 17A, 10V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Factory Lead Time :
- 22 Weeks
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Published :
- 1997
- Fall Time (Typ) :
- 34 ns
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 36A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 930 mJ
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Datasheets
- APT34F60B
N-Channel Tube 210m Ω @ 17A, 10V ±30V 6640pF @ 25V 165nC @ 10V 600V TO-247-3
APT34F60B Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 930 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6640pF @ 25V.This device conducts a continuous drain current (ID) of 36A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 115 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 37 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT34F60B Features
the avalanche energy rating (Eas) is 930 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 115 ns
a 600V drain to source voltage (Vdss)
APT34F60B Applications
There are a lot of Microsemi Corporation
APT34F60B applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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