APT31N60BCSG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.1Ohm

Power Dissipation-Max :

255W Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Voltage - Rated DC :

600V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

93A

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Current Rating :

31A

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

800 mJ

Published :

2005

JEDEC-95 Code :

TO-247AD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 18A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

31A

Mount :

Through Hole

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

3.9V @ 1.2mA

Pin Count :

3

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

3055pF @ 25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Packaging :

Tube

Additional Feature :

AVALANCHE ENERGY RATED

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE