APT31M100L
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- Mfr.Part #
- APT31M100L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 32A TO264
- Stock
- 2,033
- In Stock ：
- 2,033
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.04kW
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 33 ns
- Current Rating :
- 31A
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1040W Tc
- Case Connection :
- DRAIN
- Published :
- 1997
- Input Capacitance (Ciss) (Max) @ Vds :
- 8500pF @ 25V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 32A
- Terminal Position :
- Single
- Packaging :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Voltage - Rated DC :
- 1kV
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Pin Count :
- 3
- FET Type :
- N-Channel
- Factory Lead Time :
- 21 Weeks
- Series :
- POWER MOS 8™
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 16A, 10V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 130 ns
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.38Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 39 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- PURE MATTE TIN
- Mount :
- Through Hole
- Rise Time :
- 35ns
- Datasheets
- APT31M100L
N-Channel Tube 400m Ω @ 16A, 10V ±30V 8500pF @ 25V 260nC @ 10V 1000V TO-264-3, TO-264AA
APT31M100L Overview
The maximum input capacitance of this device is 8500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 39 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT31M100L Features
a continuous drain current (ID) of 32A
the turn-off delay time is 130 ns
a 1000V drain to source voltage (Vdss)
APT31M100L Applications
There are a lot of Microsemi Corporation
APT31M100L applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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