APT30M85BVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Turn-Off Delay Time :

43 ns

Mounting Type :

Through Hole

Rise Time :

10ns

Turn On Delay Time :

12 ns

Length :

21.46mm

Width :

16.26mm

FET Type :

N-Channel

Height :

5.31mm

Fall Time (Typ) :

7 ns

JEDEC-95 Code :

TO-247AD

Published :

1997

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Continuous Drain Current (ID) :

40A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

85m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.085Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

POWER MOS V®

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Current Rating :

40A

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation-Max :

300W Tc

Power Dissipation :

300W

Pin Count :

3

Drain to Source Breakdown Voltage :

300V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

300V

ECCN Code :

EAR99

Factory Lead Time :

31 Weeks

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Weight :

38.000013g

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4950pF @ 25V