APT30M70SVRG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pin Count :

3

Power Dissipation :

370W

Published :

1997

Continuous Drain Current (ID) :

48A

Peak Reflow Temperature (Cel) :

245

Terminal Position :

Single

Turn-Off Delay Time :

57 ns

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.07Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

70m Ω @ 500mA, 10V

Mount :

Surface Mount

Current Rating :

48A

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Series :

POWER MOS V®

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

370W Tc

Turn On Delay Time :

14 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Voltage - Rated DC :

300V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Form :

Gull wing

Packaging :

Tube

Rise Time :

21ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

PURE MATTE TIN

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V