APT30M40JVFR
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- Mfr.Part #
- APT30M40JVFR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOTOP
- Stock
- 1,056
- In Stock ：
- 1,056
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- POWER MOS V®
- Current Rating :
- 70A
- Terminal Position :
- UPPER
- Pin Count :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 500mA, 10V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Factory Lead Time :
- 23 Weeks
- Power Dissipation-Max :
- 450W Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Published :
- 1997
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 70A
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 425nC @ 10V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 300V
- Vgs (Max) :
- ±30V
- Additional Feature :
- High Voltage
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 450W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 48 ns
- Turn On Delay Time :
- 16 ns
- Pulsed Drain Current-Max (IDM) :
- 280A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Rise Time :
- 20ns
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Chassis Mount
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Datasheets
- APT30M40JVFR
N-Channel Tube 40m Ω @ 500mA, 10V ±30V 10200pF @ 25V 425nC @ 10V SOT-227-4, miniBLOC
APT30M40JVFR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10200pF @ 25V.This device conducts a continuous drain current (ID) of 70A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 280A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT30M40JVFR Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 48 ns
based on its rated peak drain current 280A.
APT30M40JVFR Applications
There are a lot of Microsemi Corporation
APT30M40JVFR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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